SK50BGLL07F3TUFBPP ? by semikron rev. 1.0 ? 22.03.2017 1 semitop ? 3 press-fit bgll_tbp igbt module SK50BGLL07F3TUFBPP features ?compact design ? one screw mounting module ? solder free mounting with press-fit terminals ? fully compatible with other semitop ? press-fit types ? improved thermal performances by aluminium oxide substrate ? 650v fast trench igbt technology ? ultrafast technology fwd ? integrated ntc temperature sensor ? ul recognized, file no. e 63 532 typical applications* ? switching ( not for linear use) ?inverter ? switched mode power supplier ?ups absolute maximum ratings symbol conditions values unit igbt 2 v ces t j =25c 650 v i c t j = 150 c t s =25c 46 a t s =70c 34 a i c t j = 175 c t s =25c 51 a t s =70c 41 a i cnom 50 a i crm i crm = 3 x i cnom 150 a v ges -20 ... 20 v t psc v cc = 400 v v ge 15 v v ces 650 v t j =150c 5s t j -40 ... 175 c absolute maximum ratings symbol conditions values unit diode 1 v rrm t j =25c 1600 v i f t j = 125 c t s =25c 30 a t s =70c 20 a i f t j = 150 c t s =25c 35 a t s =70c 26 a i fnom 25 a i fsm 10 ms sin 180 t j =25c 220 a t j =150c 200 a i 2 t 10 ms, sin 180, t j =150c 200 a2s t j -40 ... 150 c absolute maximum ratings symbol conditions values unit diode 2 v rrm t j =25c 600 v i f t j = 150 c t s =25c 60 a t s =70c 42 a i f t j = 175 c t s =25c 69 a t s =70c 52 a i fnom 30 a i frm i frm = 2 x i fnom 60 a i fsm 10 ms sin 180 t j =25c 300 a t j =175c 300 a t j -40 ... 175 c
SK50BGLL07F3TUFBPP 2 rev. 1.0 ? 22.03.2017 ? by semikron semitop ? 3 press-fit bgll_tbp igbt module SK50BGLL07F3TUFBPP features ?compact design ? one screw mounting module ? solder free mounting with press-fit terminals ? fully compatible with other semitop ? press-fit types ? improved thermal performances by aluminium oxide substrate ? 650v fast trench igbt technology ? ultrafast technology fwd ? integrated ntc temperature sensor ? ul recognized, file no. e 63 532 typical applications* ? switching ( not for linear use) ?inverter ? switched mode power supplier ?ups absolute maximum ratings symbol conditions values unit diode 4 v rrm 1600 v i f t j = 125 c t s =25c 44 a t s =70c 29 a i f t j = 150 c t s =25c 51 a t s =70c 38 a i fnom 35 a i fsm 10 ms sin 180 t j =25c 370 a t j =150c 270 a i 2 t 10 ms, sin 180, t j =150c 365 a 2 s t j -40 ... 150 c absolute maximum ratings symbol conditions values unit module i t(rms) t terminal = 100 c, t s = 60c, per pin 40 a t stg -40 ... 125 c v isol ac, sinusoidal, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt 2 v ce(sat) i c =50a v ge =15v chiplevel t j =25c 1.85 2.22 v t j =150c 2.18 2.55 v v ce0 chiplevel t j =25c 1.10 1.20 v t j =150c 1.00 1.10 v r ce v ge =15v chiplevel t j =25c 15 20 m t j =150c 24 29 m v ge(th) v ge =v ce v, i c =0.8ma 4.2 5.1 5.6 v i ces v ge =0v v ce = 650 v t j =25c 0.005 ma t j =150c -ma c ies v ce =25v v ge =0v f=1mhz 3.1 nf c oes f=1mhz 0.116 nf c res f=1mhz 0.09 nf q g v ge = - 8 v...+ 15 v 185 nc r gint t j =25c 0 t d(on) v cc = 300 v i c =50a r g on =16 r g off =16 di/dt on = 3077 a/s di/dt off =3636a/s v ge neg =-15v v ge pos =15v t j =150c 169 ns t r t j =150c 81 ns e on t j =150c 2.79 mj t d(off) t j =150c 431 ns t f t j =150c 28 ns e off t j =150c 1.03 mj r th(j-s) per igbt 1.1 k/w
SK50BGLL07F3TUFBPP ? by semikron rev. 1.0 ? 22.03.2017 3 semitop ? 3 press-fit bgll_tbp igbt module SK50BGLL07F3TUFBPP features ?compact design ? one screw mounting module ? solder free mounting with press-fit terminals ? fully compatible with other semitop ? press-fit types ? improved thermal performances by aluminium oxide substrate ? 650v fast trench igbt technology ? ultrafast technology fwd ? integrated ntc temperature sensor ? ul recognized, file no. e 63 532 typical applications* ? switching ( not for linear use) ?inverter ? switched mode power supplier ?ups characteristics symbol conditions min. typ. max. unit diode 1 v f i f =25a chiplevel t j =25c 1.26 1.70 v t j =125c 1.26 1.67 v v f0 chiplevel t j =25c 0.88 0.98 v t j =125c 0.73 0.83 v r f chip t j =25c 15 29 m t j =125c 21 34 m i rrm i f =25a -a q rr -c e rr -mj r th(j-s) 1.8 k/w characteristics symbol conditions min. typ. max. unit diode 2 v f i f =30a chiplevel t j =25c 1.85 2.35 v t j =150c 1.10 1.40 v v f0 t j =25c 1.55 2.05 v t j =150c 0.90 1.20 v r f chiplevel t j =25c 10 10 m t j =150c 6.7 6.7 m i rrm i f =50a di/dt off =3077a/s v ge =-15v v cc = 300 v t j =150c 58 a q rr t j =150c 1.8 c e rr t j =150c 0.46 mj r th(j-s) per diode 1.5 k/w
SK50BGLL07F3TUFBPP 4 rev. 1.0 ? 22.03.2017 ? by semikron semitop ? 3 press-fit bgll_tbp igbt module SK50BGLL07F3TUFBPP features ?compact design ? one screw mounting module ? solder free mounting with press-fit terminals ? fully compatible with other semitop ? press-fit types ? improved thermal performances by aluminium oxide substrate ? 650v fast trench igbt technology ? ultrafast technology fwd ? integrated ntc temperature sensor ? ul recognized, file no. e 63 532 typical applications* ? switching ( not for linear use) ?inverter ? switched mode power supplier ?ups characteristics symbol conditions min. typ. max. unit diode 4 v f i f =35a chiplevel t j =25c 1.20 1.60 v t j =125c 1.19 1.56 v v f0 chip t j =25c 0.88 0.98 v t j =125c 0.73 0.83 v r f chiplevel t j =25c 13 18 m t j =125c 13 21 m i rrm -a q rr -c e rr -mj r th(j-s) per diode 1.3 k/w characteristics symbol conditions min. typ. max. unit module m s to heatsink 2.25 2.5 nm wweight 30 g characteristics symbol conditions min. typ. max. unit temperature sensor r 100 t r =100c 493 5% b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k
SK50BGLL07F3TUFBPP ? by semikron rev. 1.0 ? 22.03.2017 5 fig. 1: typ. diode4 forwar d characteristic, incl. r cc'+ ee' fig. 2: typ. diode1 forward characteristic, incl. r cc'+ ee' fig. 3: typ. igbt output characteristic, inclusive r cc'+ ee' fig. 4: rated igbt cu rrent vs. temperature i c = f (t s ) fig. 5: typ. turn-on /-off energy = f (i c ) fig. 6: typ. turn-on /-off energy = f (r g )
SK50BGLL07F3TUFBPP 6 rev. 1.0 ? 22.03.2017 ? by semikron fig. 7: typ. gate charge characteristic fig. 8: typ. switching times vs. i c fig. 9: typ. switching times vs. gate resistor r g fig. 10: typ. diode2 forward characteristic, incl. r cc'+ ee'
SK50BGLL07F3TUFBPP ? by semikron rev. 1.0 ? 22.03.2017 7 semitop 3 press-fit bgll-tbp
SK50BGLL07F3TUFBPP 8 rev. 1.0 ? 22.03.2017 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes.
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